Discussion: C-face 6H-SiC
Re-oxidation of C-face 6H-SiC at 700oC for 5 hours reduced the measured current on the samples
Re-oxidation of C-face 6H-SiC at 700oC for 2 hours and at 500oC for 5 hours raised the current in some cases
Improvement of the oxide seems to be both time and temperature dependent
Notes:
Re-oxidizing the C-face 6H-SiC at a 700oC for 5 hours reduced the current through the oxide. This may be the result of allowing the entrapped products of incomplete oxidation to finish the process and allowing dopant ions to diffuse from within the oxide layer. This process seems to be both time and temperature dependent as seen by the reduction in the oxide quality at lower re-oxidation temperature and shorter re-oxidation time as compared to the samples that were re-oxidized at 700oC for 5 hours.