Conclusions
Re-oxidation of n-type C-face 6H-SiC can be used to increase the quality of the oxide layer
The changes involved that bring about this improvement remain to be determined
Further research is under way to study this effect on C-face 4H-SiC in order to more accurately determine the changes produced
Notes:
Re-oxidation of n-type C-face 6H-SiC can be used to improve the quality of the thermal oxide layer that has been previously grown on a wafer. Further experimentation is underway to study the effect of re-oxidation on C-face 4H-SiC in order to more accurately determine the nature of the changes produced in the oxide layer.