C-face 6H-SiC Re-Oxidized at 700oC for 2 hours

• The I-V of the C-face 6H-SiC re-oxidized at 700oC for 2 hr did not show consistent improvements

• Usually, current levels at positive gate bias were higher and at negative gate bias unchanged

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We tested the effect of a lower temperature and shorter re-oxidation time on the 6H samples. The C-face 6H-SiC samples that were re-oxidized at 700oC for 2 hours (shown here) and at 500oC for 5 hours displayed current levels that were in the same range as samples which were not treated. In some cases, the current for these samples were greater than the current for the untreated samples and the samples treated at 700oC for 5 hours.