C-face 6H-SiC Re-Oxidized at 700oC for 5 hours
The I-V curves of the C-face 6H-SiC samples displayed a significant change after re-oxidation at 700oC for 5 hours
Current levels were lower for both positive and negative gate bias
Notes:
The I-V curves measured on the C-face 6H-SiC samples before and after a 700oC, 5 hour re-oxidation are displayed here. The solid black lines are the current values for the untreated sample and the dotted red lines are the values after re-oxidation. The re-oxidation produced a decrease in current without a significant increase in oxide thickness. The current measurements at a Vg of +30V were 2 orders of magnitude lower on the samples after treatment. The current measured at a Vg of -30V were 4 orders of magnitude lower on the treated samples.