Slide 11 of 16
Notes:
DATA Si-face 4H-SiC The I-V curves of the Si-face 4H-SiC samples,shown in this figure, displayed little or no change in the measured current values after wet re-oxidation at 700oC for 5 hours. The red curves are the current values after re-oxidation and the black curves are values on the untreated sample. Current levels both with and without re-oxidation were high indicating a poor quality oxide. The oxides of both the treated and untreated samples broke down at a gate bias (Vg) of less than +10V.
