Slide 7 of 16
Notes:
The substrates used to form the MOS capacitors were 1 cm x 1cm pieces of a p-type Si wafer with an oxide layer of 100 nm obtained from Texas Instruments, an n-type C-face 6H-SiC wafer from Cree Research with an oxide layer of 330 nm and an n-type Si-face 4H-SiC wafer with an epitaxial layer of SiC grown on the surface also obtained from Cree Research with an oxide layer of 130 nm.The samples were prepared for re-oxidation by a series of ten-minute ultrasonic rinses in solvents. The samples were then cleaned in a heated 10:1 volumetric solution of DI water and HCl. All cleaning was performed immediately before the re-oxidation in order to minimize possible contamination.
