Slide 6 of 16
Notes:
This experiment addressed the effect of low temperature wet re-oxidation on the quality of the oxide and interface. This was accomplished by comparing the current-voltage (I-V) measurements on oxidized C-face 6H-SiC samples before and after re-oxidization at different times and temperatures.
The re-oxidation temperature of 700oC was chosen to avoid surface degradation that occurs at higher temperatures
This temperature was expected to produce a change in the oxide without an increase in the oxide thickness
