Slide 5 of 16
Notes:
Metal Oxide Semiconductor
The metal-oxide-semiconductor (MOS) structure is the heart of a MOS field-effect-transistor. As illustrated in this figure the oxide film on Si or SiC forms the dielectric layer of a MOS capacitor. The top metal is referred to as the gate. Of particular interest are the electrical properties of the thermal oxide layer that is grown on a SiC substrate and the interface where the oxide meets the substrate material
