Slide 4 of 16
Notes:
One of the ways a SiC wafer is different from a Si wafer is that the surfaces are different. As illustrated in the figure one face of a SiC wafer is dominated by Si atoms and the other by C atoms.
In other research, the electrical properties of Si-face and C-face n-type SiC showed that the quality of the oxide on the Si-face was superior to the oxide on the C-face . Little experimental work has been performed to address the improvement of the oxide quality of the C-face of SiC. This area must be explored in order to develop a greater understanding of SiC in order to develop more reliable devices.
