Slide 3 of 16
Notes:
Silicon carbide (SiC) is a wide band-gap semiconductor that has received a great deal of attention for its potential use as a high temperature semiconductor material. This is due to the resistance of SiC to chemical attack, its high-temperature stability and the ability to process SiC using the same procedures and equipment as silicon (Si).
SiC is the only compound semiconductor whose native oxide is SiO2. Thermal oxidation of SiC is similar to Si and utilizes the same equipment
