Introduction

Table of Contents

PPT Slide

Introduction

Why Silicon Carbide

Orientation of Silicon Carbide

Metal-Oxide-Semiconductor(MOS) Capacitor

Experimental

Sample Preparation

Re-oxidation Procedure

Metallization

Measurement Procedure

Si-face 4H-SiC Re-Oxidized at 700oC for 5 hours

C-face 6H-SiC Re-Oxidized at 700oC for 5 hours

C-face 6H-SiC Re-Oxidized at 700oC for 2 hours

Discussion: C-face 6H-SiC

Conclusions

Acknowledgments

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